Metal-oxide-semiconductor transistor with selective epitaxial growth film

摘要

A metal-oxide-semiconductor (MOS) transistor with improved resistance to HF attack during a pre-SEG clean process is disclosed. The MOS transistor encompasses a semiconductor substrate having a main surface and a gate electrode with two sidewalls. The gate electrode is patterned on the main surface of the semiconductor substrate. Source/drain (S/D) doping regions are formed on opposite sides of the gate electrode in the main surface of the semiconductor substrate. A gate oxide layer is disposed underneath the gate electrode. A surface-nitridized silicon oxide liner covers the two sidewalls of the gate electrode. The surface nitridized silicon oxide liner further overlies lightly doped drain (LDD) regions in close proximity to the gate electrode. A silicon nitride spacer is disposed on the surface-nitridized silicon oxide liner. An elevated selective epitaxial growth (SEG) film is grown on the S/D regions and top of the gate electrode. A silicide layer formed from the elevated SEG film.