| 摘要 |
The invention provides a photolithographic mask for the exposure of radiation-sensitive resist layers on semi-conductor substrates, the mask having at least one radiation-transmissive substrate and at least one radiation-opaque layer and/or at least one half-tone layer. The radiation-opaque layer and/or the half-tone layer are used to provide main features, the main features being formed in such a way that the pattern formed by the main features is transferred into the resist layer when irradiated, and the radiation-opaque layer and/or the half-tone layer are used to provide assist features, the assist features being formed in such a way that the pattern formed by the assist features is not transferred into the resist layer when irradiated.
|
