III-NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE WITH MESH TYPE ELECTRODE

摘要

According to the present invention, the current spreading occurs mainly through the transparent electrode layer (27) rather than the upper contact layer (15). For this reason, sufficient current spreading can be achieved even when the size of each opening is not small, and the present invention provides advantages in that the mesh-type electrode layer (27) does not need to be finely formed as in the prior art, and thus, a portion covered by the mesh-type electrode layer (27) is reduced, resulting in an increase in the external quantum efficiency of the device. Particularly, even when the thickness of the upper contact layer (15) is thin (<0.5 µm), the size of each opening in the mesh-type electrode layer (27) may be increased to larger than 4 µm, so that a complicated patterning process does not need to be carried out.