发明名称 POLISHING COMPOSITION AND METHOD FOR POLISHING A CONDUCTIVE MATERIAL
摘要 <p>A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises phosphoric acid, at least one chelating agent, a corrosion inhibitor, a salt, an oxidizer, abrasive particulates, at least one pH adjusting agent to provide a pH from about 4 to about 7 and a solvent. The method further includes forming a passivation layer on the conductive material layer, removing the passivation layer to expose a portion of the conductive material layer, applying a first bias to the substrate, and removing at least about 50% of the conductive material layer. The method further includes separating the substrate from the first polishing composition, exposing the substrate to a second polishing composition and a second bias, and continuing to remove the conductive material layer.</p>
申请公布号 WO2004111146(A1) 申请公布日期 2004.12.23
申请号 WO2004US17691 申请日期 2004.06.04
申请人 APPLIED MATERIALS, INC.;LIU, FENG, Q.;CHEN, LIANG-YUH;TSAI, STAN, D.;DUBOUST, ALAIN;NEO, SIEW, S.;HU, YONGQI;WANG, YAN;BUTTERFIELD, PAUL, D. 发明人 LIU, FENG, Q.;CHEN, LIANG-YUH;TSAI, STAN, D.;DUBOUST, ALAIN;NEO, SIEW, S.;HU, YONGQI;WANG, YAN;BUTTERFIELD, PAUL, D.
分类号 B23H3/08;B23H5/08;B24B37/04;C09G1/04;C25F3/02;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):C09G1/02;C09K3/14;C09G1/02 主分类号 B23H3/08
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