| 摘要 |
The invention relates to a method for the fabrication of a device comprising electrical through hole interconnects. In one embodiment, the method comprises anisotropical dry etching of a patternable dielectric material within a substrate hole. One aspect of the invention provides a novel method for producing via or through hole interconnects between microelectronic elements, which is relatively easy to perform and can be applied relatively cheaply compared to the state of the art. The method should, for instance, be applicable in thin chip technology as MCM (Multi Chip Module) and system in a package (SIP) technology. |
