发明名称 CAPACITOR STRUCTURE
摘要 A capacitor structure includes a first conductive layer, a first insulating layer disposed on a substrate in sequence, a second conductive layer disposed on portions of the first insulating layer, a second insulating layer disposed on the second conductive layer and the first insulating layer, a third conductive layer disposed on portions of the second insulating layer, a third insulating layer disposed on the third conductive layer and the second insulating layer, and a fourth conductive layer disposed on the third insulating layer. The third conductive layer and the fourth conductive layer are electrically connected to the first conductive layer and the second conductive layer through at least one first contact hole adjacent to the second conductive layer and at least one second contact hole, respectively.
申请公布号 US2004259359(A1) 申请公布日期 2004.12.23
申请号 US20030605015 申请日期 2003.09.01
申请人 CHANG CHIH-CHIN;YEH KUANG-CHAO 发明人 CHANG CHIH-CHIN;YEH KUANG-CHAO
分类号 G02F1/1362;H01L27/12;(IPC1-7):H01L21/302;H01L21/461 主分类号 G02F1/1362
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