SEMICONDUCTOR LASER

摘要

A heavy-hole well (309) and a light-hole well (310) are formed in a well layer. The continuous state (311) of the light holes in a barrier layer is lower than the quantum state (312) of the heavy holes in the well layer. Further, the quantum state of the light holes in the well layer is almost equal to the continuous state (311) of the light holes in the barrier layer. Thus, a strained quantum well layer is formed by alternating strained well layer and a barrier layer, and the differential gain of a semiconductor laser which has such a strained quantum well layer serving as an active layer can be enhanced.