发明名称 Chemical mechanical polishing apparatus and method of chemical mechanical polishing
摘要 There is provided an apparatus for polishing a substrate, including (a) a polishing pad formed with a plurality of through-holes through which polishing material is supplied to a surface of the polishing pad, (b) a level block on which the polishing pad is mounted, and (c) a rotatable carrier for supporting a substrate thereon, the carrier being positioned in facing relation with the level block, the level block being rotatable around a rotation axis thereof with the rotation axis being moved along an arcuate path, and causing the polishing pad to make contact with the substrate for polishing the substrate, the polishing pad having a first ring-shaped region concentric thereto where no through-holes are formed. For instance, the first ring-shaped region has a width greater than 10%, but smaller than 95% of a radius of the polishing pad. The apparatus enhances uniformity in polishing a substrate.
申请公布号 US2004259482(A1) 申请公布日期 2004.12.23
申请号 US20040896718 申请日期 2004.07.22
申请人 SUZUKI MIEKO;TSUCHIYA YASUAKI 发明人 SUZUKI MIEKO;TSUCHIYA YASUAKI
分类号 B24B37/00;B24B37/04;B24B37/10;B24B57/02;B24D13/14;H01L21/304;(IPC1-7):B24B1/00 主分类号 B24B37/00
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