发明名称 |
MULTILAYER METAL LINE ALIGNMENT KEY STRUCTURE FOR REDUCING ALIGNMENT-TIME AND SECURING RELIABILITY OF ALIGNING PROCESS |
摘要 |
PURPOSE: A multilayer metal line alignment key structure is provided to reduce alignment-time and to secure the reliability of an aligning process by using a plurality of alignment keys with the same shape formed on the same vertical line of a scribe lane. CONSTITUTION: An alignment key structure(310) includes a first to third alignment key(311,312,313). Each metal line layer and a corresponding alignment key are simultaneously formed in an interlayer dielectric. The first to third alignment keys have the same shape regardless of the shape of the metal line layer. The first to third alignment keys are arranged on the same vertical line of a scribe lane.
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申请公布号 |
KR20040108034(A) |
申请公布日期 |
2004.12.23 |
申请号 |
KR20030038773 |
申请日期 |
2003.06.16 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
LEE, JIN GYU |
分类号 |
H01L21/3205;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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