发明名称 MULTILAYER METAL LINE ALIGNMENT KEY STRUCTURE FOR REDUCING ALIGNMENT-TIME AND SECURING RELIABILITY OF ALIGNING PROCESS
摘要 PURPOSE: A multilayer metal line alignment key structure is provided to reduce alignment-time and to secure the reliability of an aligning process by using a plurality of alignment keys with the same shape formed on the same vertical line of a scribe lane. CONSTITUTION: An alignment key structure(310) includes a first to third alignment key(311,312,313). Each metal line layer and a corresponding alignment key are simultaneously formed in an interlayer dielectric. The first to third alignment keys have the same shape regardless of the shape of the metal line layer. The first to third alignment keys are arranged on the same vertical line of a scribe lane.
申请公布号 KR20040108034(A) 申请公布日期 2004.12.23
申请号 KR20030038773 申请日期 2003.06.16
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 LEE, JIN GYU
分类号 H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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