METHOD FOR FORMING VIA HOLE OF SEMICONDUCTOR DEVICE TO PREVENT METAL LAYER FROM BEING CORRODED BY CHEMICALS IN SUBSEQUENT PROCESS WITHOUT DAMAGE TO ACCUMULATED CHARGES

摘要

PURPOSE: A method for forming a via hole of a semiconductor device is provided to prevent a metal layer from being corroded by chemicals in a subsequent process without damage to accumulated charges by forming an Al2O3 oxide layer on an exposed metal layer while using O3 plasma. CONSTITUTION: An aluminum layer and an interlayer dielectric(52) are sequentially formed on a semiconductor substrate(50). The interlayer dielectric is partially etched to form an opening part partially exposing the aluminum layer. An Al2O3 layer(62) is formed on the exposed aluminum layer. The Al2O3 layer is formed using O3 plasma.