| 摘要 |
A solid-state imaging device has an array of pixels arranged in a matrix pattern of rows and columns. Each pixel has a photodiode for developing a voltage corresponding to light incident thereon, a first amplifying transistor for amplifying the voltage and a row select switching transistor responsive to a row select signal from a row line for coupling the amplified voltage to a column line. Multiple second amplifying transistors are respectively connected to multiple column lines. When the row select switching transistors of the pixels in one of the rows are turned on in response to a row select signal, the second amplifying transistors and the first amplifying transistors of the selected row jointly constitute voltage followers for respectively amplifying the voltages coupled to the column lines. Multiple column select switching transistors provide sequentially coupling of the outputs of the voltage followers to an output line in response to column select signals.
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