METHOD FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE TO REDUCE LOSS OF BIT LINE HARD MASK NITRIDE LAYER

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent a punch phenomenon by reducing loss of a bit line hard mask nitride layer by the same etch selectivity of an oxide layer/nitride layer. CONSTITUTION: A gate electrode(43) and a nitride layer pattern(45) are stacked on a semiconductor substrate. A first interlayer dielectric(47) is formed on the entire surface of the semiconductor substrate. A tungsten layer(49) and a nitride layer pattern(51) are formed on the first interlayer dielectric. A second interlayer dielectric(53) is formed on the entire surface of the semiconductor substrate. A nitride layer(55) is deposited on the second interlayer dielectric. A third interlayer dielectric(57) is deposited thereon. A storage node plug contact hole is formed by selectively removing the third interlayer dielectric. A storage node contact plug(61) is formed within the storage node plug contact hole.