| 发明名称 |
Systems and methods using non-volatile memory cells |
| 摘要 |
Described in this disclosure is a non-volatile memory cell. The non-volatile memory cell generally includes a short-range atomic order substrate, a dielectric positioned adjacent to the substrate, and a non-floating gate positioned adjacent to the dielectric.
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| 申请公布号 |
US2004251486(A1) |
申请公布日期 |
2004.12.16 |
| 申请号 |
US20030460979 |
申请日期 |
2003.06.13 |
| 申请人 |
VAN BROCKLIN ANDREW L.;JACKSON WARREN B. |
发明人 |
VAN BROCKLIN ANDREW L.;JACKSON WARREN B. |
| 分类号 |
H01L21/77;H01L21/822;H01L21/84;H01L27/06;H01L27/12;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/77 |
| 代理机构 |
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代理人 |
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