| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an EB mask and the EB mask, and an EB exposure method using the same by which the internal stress of an EB resist 8 is relaxed to reduce warpage of a mask substrate and an Si membrane 6, so that the reliability of the EB mask can be improved and the generation of failure be also reduced in the method of manufacturing an EB mask using an EB lithography process. <P>SOLUTION: A mask pattern 14 is provided in a resist 8 formed on a substrate, and a pattern 12 is also provided to relax or block the conveyance of an internal stress of the resist 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
