发明名称 Adjustable lithography blocking device and method
摘要 The present invention provides, in one embodiment, a method (100) of manufacturing a semiconductor device. A conventionally formed reticle is positioned over a resist located on a substrate (110). A radiation path through the reticle and a window assembly located between a radiation source and resist (120), is considered. It is determined whether or not the radiation would expose a predefined blocking area of the resist within the exposure zone (130). If the radiation would expose a blocking area, then the window assembly is configured to prevent radiation from exposing the blocking area in the exposure zone (140). Other embodiments include a window assembly (300) and system (400) to facilitate manufacturing of the semiconductor device according to the method (100).
申请公布号 US2004251429(A1) 申请公布日期 2004.12.16
申请号 US20030459681 申请日期 2003.06.11
申请人 TEXAS INSTRUMENTS, INCORPORATED 发明人 CHATTERJEE BASAB;GULDI RICHARD L.;MELCHER KEITH
分类号 G03F7/20;(IPC1-7):G21K1/04 主分类号 G03F7/20
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