发明名称 MAGNETIC FIELD SENSOR WITH AUGMENTED MAGNETORESISTIVE SENSING LAYER
摘要 A ferromagnetic thin-film based magnetic field sensor having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof unpon one of which a magnetization reference layer is provided and upon the other there being provided a sensing layer. A spacer layer is provided on the sensing film to separate this sensing film from an augmenting film with the spacer layer being sufficiently thick so as to significantly reduce or eliminate topological coupling between the sensing and augmenting films, and to significantly randomize spin states of emerging electrons traversing therethrough.
申请公布号 WO2004044595(A3) 申请公布日期 2004.12.16
申请号 WO2003US35944 申请日期 2003.11.12
申请人 NVE CORPORATION 发明人 QIAN, ZHENGHONG;DAUGHTON, JAMES, M.;WANG, DEXIN;TONDRA, MARK, C.
分类号 G01R33/09;G11B5/39 主分类号 G01R33/09
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