MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To prevent oxidation of a conductor stripe under deposition in a silicon oxide isolation layer by providing the conductor stripe with an upper layer of antioxidant material before the silicon oxide isolation layer is formed thereon. CONSTITUTION: A metal layer 13 is formed on the surface 2 and etched according to a pattern corresponding to metal conductor stripes 17, 18 thus forming the metal conductor stripes 17, 18 on the surface 2. The metal conductor stripes 17, 18 are provided with an upper layer 16 of antioxidant material before a silicon oxide layer 19 is formed thereon. Consequently, the silicon oxide layer 19 can be formed on the metal conductor stripes 17, 18 with an extremely good step coverage. The upper layer 16 itself is not oxidized during deposition of silicon oxide and thereby the lower metal can be protected sufficiently against oxidation.