发明名称 STRESS EVALUATION METHOD AND STRESS EVALUATION DEVICE BY X-RAY DIFFRACTION
摘要 PROBLEM TO BE SOLVED: To provide a stress evaluation method and a stress evaluation device by X-ray diffraction capable of evaluating accurately and quantitatively a stress generated in a hetero interface between a crystal and a different kind of material. SOLUTION: The displacement of a crystal atom is determined by analyzing an intensity profile of X-ray CTR scattering appearing on both sides in the vertical direction on the surface of an X-ray diffraction peak, and the stress generated in the hetero interface between the crystal and the different kind of material is evaluated from the result. The intensity profile of X-ray CTR scattering reacts sensitively with the atom position on the crystal surface. However, since the intensity profile of the X-ray CTR is spread over an intensity range of 3-4 figures, weighting to data at the analysis time is difficult, and if the crystal surface has poor flatness, intensity attenuation is remarkable. Accordingly, for example, the intensity ratio between each measurement data having the equal distance from the X-ray diffraction peak is calculated, and an asymmetric curve plotted from the calculation result is used, to thereby determine accurately the displacement of the crystal atom. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004354197(A) 申请公布日期 2004.12.16
申请号 JP20030152214 申请日期 2003.05.29
申请人 FUJITSU LTD 发明人 DOI SHUICHI
分类号 G01L1/00;G01N23/207;(IPC1-7):G01L1/00 主分类号 G01L1/00
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