TEMPERATURE CORRECTION WAFER OF SEMICONDUCTOR DEVICE FABRICATION SYSTEM, METHOD FOR FABRICATING THE SAME, AND METHOD FOR CORRECTING HEATER TEMPERATURE BY COMPARING RESISTANCE VALUES BEFORE AND AFTER THERMAL PROCESS FOR THE SAME

摘要

PURPOSE: A temperature correction wafer of semiconductor device fabrication system, method for fabricating the same, and temperature correction method using the same are provided to correct heater temperature by comparing resistance values before and after thermal process for the same. CONSTITUTION: An initial resistance of a temperature correction wafer is measured and a thermal process thereof is performed(S200,S300). A varied resistance of the temperature correction wafer is measured(S400). A resistance variation is calculated by using the initial resistance and the varied resistance. The temperature correction wafer is loaded and a temperature correction process thereof is performed(S500,S600). A correction resistance variation is calculated(S700). A real temperature is calculated and the temperature correction process is performed by using the real temperature(S800).