| 发明名称 |
HIGH ON-CURRENT DEVICE FOR HIGH PERFORMANCE EMBEDDED DRAM (EDRAM) AND METHOD OF FORMING THE SAME |
| 摘要 |
A method for enhancing the on-current carrying capability of a MOSFET device is disclosed. In an exemplary embodiment, the method includes recessing fill material formed within a shallow trench isolation (STI) adjacent the MOSFET so as to expose a desired depth of a sidewall of the STI, thereby increasing the effective size of a parasitic corner device of the MOSFET. The threshold voltage of the parasitic corner device is then adjusted so as to be substantially equivalent to the threshold voltage of the MOSFET device.
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| 申请公布号 |
US2004251512(A1) |
申请公布日期 |
2004.12.16 |
| 申请号 |
US20030458413 |
申请日期 |
2003.06.10 |
| 申请人 |
KHAN BABAR A.;DIVAKARUNI RAMA;IYER SUBRAMANIAN S.;CHENG TZYY-MING |
发明人 |
KHAN BABAR A.;DIVAKARUNI RAMA;IYER SUBRAMANIAN S.;CHENG TZYY-MING |
| 分类号 |
H01L21/265;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8244;H01L21/8247;(IPC1-7):H01L29/00;H01L21/823 |
主分类号 |
H01L21/265 |
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