发明名称 RADIATION-HARD CIRCUIT
摘要 <p>A radiation hardening circuit that includes two series-connected transistors that can replace any single transistor in a circuit. The hardening circuit includes a resistor that has a fist node and a second node, a first transistor having a source terminal, a gate terminal, a drain terminal, and a body terminal. The first node of the resistor may be conductively connected t the drain terminal of the first transistor and the second node of the resistor is conductively connected to the body terminal of the first transistor. The hardening circuit also includes a second transistor in series with the first transistor, driven so that both transistors are off or on at any given time. The circuit is resistant to radiation-induced events due to the body bias of the first transistor, the off state of the second transistor, and the current limiting effect of the resistor.</p>
申请公布号 WO2004109707(A1) 申请公布日期 2004.12.16
申请号 WO2004US16487 申请日期 2004.05.26
申请人 HONEYWELL INTERNATIONAL INC.;ERSTAD, DAVID, O. 发明人 ERSTAD, DAVID, O.
分类号 G11C11/412;H01H47/26;H01H50/12;H01L27/12;H01L29/786;H03B1/00;H03K19/003;(IPC1-7):G11C11/412 主分类号 G11C11/412
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