| 摘要 |
<p>A non-volatile memory cell transistor has directivity that current flows only from the drain to the source and electric charge is exchanged only at the source side. A pair of memory cell transistors are connected to a word line. One of the memory cell transistors has a source and a drain connected to a drain and a source of the other memory cell transistor. During data rewrite operation, reverse voltage is applied to the source and drain of the pair of memory cell transistors. According to the directivity of the memory cell transistor, electric charge exchange for the electric charge accumulation layer is performed only in the source region. Accordingly, it is possible to rewrite only data of one of the memory cell transistors. As a result, it is possible to rewrite data for each memory cell without increasing the memory cell size.</p> |
