CMOS TFT CURRENT MIGRATION AND DISPLAY DEVICE USING THE SAME

摘要

PURPOSE: A CMOS TFT and a display device using the same are provided to control an absolute value of a threshold voltage and a current migration degree by setting differently the number of primary grain boundaries within active channels of a P type TFT and an N type TFT. CONSTITUTION: The number of primary grain boundaries of polysilicon included in an active channel region of a P type TFT is different from the number of primary grain boundaries of polysilicon included in an active channel region of an N type TFT. The number of primary grain boundaries included in the P type TFT is small at least as much as 1 in comparison with the number of primary grain boundaries included in the N type TFT. A length of a channel of the P type TFT is equal to a length of a channel of the N type TFT.