发明名称 Control of semiconductor fabrication process using scanning electron microscopy and a focused ion beam device
摘要 Apparatus and method for in-line automation of a semiconductor fabrication process allowing for the selection of a control parameter value that will move a measured workpiece geometry toward a target acceptance range. Such feed-forward and feedback control applies information acquired through inprocess metrology to a downstream and an upstream fabrication step, respectively. In an embodiment, The feed-forward and feedback contorls are provided to the respective fabrication steps via neural networks having as an input a multiple parameter characterization of the workpiece morphology. This integrated system can adapt to a changes in variable that may not be adequately monitored, or whose impact may not be fully appreciated to adjust the process. Metrology devices may be a scanning electron microscoe (SEM), a focused ion beam (FIB) apparatus or a combined SEM-FIB device.
申请公布号 GB2402809(A) 申请公布日期 2004.12.15
申请号 GB20040018786 申请日期 2003.02.24
申请人 * AGERE SYSTEMS INC 发明人 ERIK CHO * HOUGE;JOHN MARTIN * MCINTOSH;ROBERT FRANCIS * JONES
分类号 G01N23/20;B24B37/04;C09G1/02;G01N23/225;G05B19/418;H01J37/26;H01L21/304;(IPC1-7):G01N23/225 主分类号 G01N23/20
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