| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
<p>A barrier film 5 such as silicon oxide film or the like is formed on the back surface of a semiconductor substrate. Then, a copper-based metal film is formed on the principal surface of the semiconductor substrate. <IMAGE></p> |
| 申请公布号 |
EP0999584(B1) |
申请公布日期 |
2004.12.15 |
| 申请号 |
EP19990121911 |
申请日期 |
1999.11.05 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
AOKI, HIDEMITSU |
| 分类号 |
H01L21/3205;C25D5/48;C25D7/12;H01L21/24;H01L21/283;H01L21/316;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
