发明名称 Non-volatile semiconductor memory for storing initially-setting data
摘要 A non-volatile semiconductor memory includes a memory cell array having a plurality of electrically-rewritable non-volatile memory cells. The memory cell array is provided with an initially-setting data area, programmed in which is initially-setting data for deciding memory operation requirements. The non-volatile semiconductor memory also includes an initial-set data latch. The initially-setting data of the memory cell array is read out and transferred to the data latch in an initially-setting operation.
申请公布号 US6831859(B2) 申请公布日期 2004.12.14
申请号 US20030703503 申请日期 2003.11.10
申请人 发明人
分类号 G11C7/20;G11C16/20;G11C29/00;(IPC1-7):G11C16/06 主分类号 G11C7/20
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