发明名称 PHASE CHANGE RECORDING MEDIUM AND PHASE CHANGE MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a phase change recording medium having high reliability and high repetition durability, and to provide a phase change memory having high reliability. <P>SOLUTION: The phase change recording medium provided with a substrate, a first dielectric film formed on one principal surface side of the substrate, a recording film formed so as to come in contact with the first dielectric film and a second dielectric film formed so as to come in contact with the recording film. In the recording medium tensile strain is given to the recording film. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004348906(A) 申请公布日期 2004.12.09
申请号 JP20030147090 申请日期 2003.05.26
申请人 HITACHI LTD 发明人 IWASAKI TOMIO;MIURA HIDEO
分类号 B41M5/26;G11B7/24;G11B7/241;G11B7/243;G11B7/254;G11B7/257 主分类号 B41M5/26
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