| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming wiring, which reduces the dishing of embedded copper wiring without generating polishing residues of copper around a substrate. <P>SOLUTION: The method comprises steps of depositing a conductive film on an insulating film on the substrate so as to be deposited in a groove formed in the insulating film, and removing the conductive film that has run over from the groove by polishing. The conductive film deposited in the deposition step is even throughout an inplane of the substrate. In the removal step, independent of a polishing load, an air pressure onto a rear of the substrate by a support 104 is controlled so that the polishing speed in the inplane region which is inside of 5mm from an end of the substrate is kept at a constant level, and that the polishing speed in the region which is outside of 5mm from the end of the substrate is permitted to be higher than the polishing speed in the inplane region which is inside of 5mm from the end of the substrate. Other than copper, the conductive film may consist of tantalum or tantalum nitride, or stacked layer of the both. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
