SEMICONDUCTOR DEVICE FOR ELECTRIC POWER USE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power use that achieves high current-carrying capability in an ON state. SOLUTION: The semiconductor device for electric power includes a plurality of trenches (4) which are arranged in a surface of a semiconductor active layer so as to reach a first base layer (1) of a first conductivity type. The trenches (4) are spaced so as to form a main cell (MR) and a dummy cell (DR). A second base layer (7) of a second conductivity type and emitter layers (8) of a first conductivity type are arranged in the main cell (MR), and a buffer layer (9) of a second conductivity type is arranged in the dummy cell (DR). A gate electrode (6) is arranged in the trench (4) via a gate insulating film (5). A partition structure (20) is arranged in the surface of the semiconductor active layer such that the buffer layer (9) is electrically isolated from an emitter electrode (12). COPYRIGHT: (C)2005,JPO&NCIPI