| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide memory cells which are markedly reduced in cell area and enable information stored in them to be read out well. <P>SOLUTION: When information held by transistors is read out, a series of operations carried out to read out information for second bit lines connected to the transistors holding information to be read out is identical to the ones carried out for first bit lines other than the first bit lines connected to the transistors holding information to be read out. Therefore, the memory cells holding information to be read out are hardly affected by signals transmitted from the other memory cells or hardly affect the other bit lines, and information stored in the memory cells is accurately read out. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
