| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can be easily made minute and in which write-in/erasing can be processed automatically and internally, and erroneous processing is prevented. <P>SOLUTION: The semiconductor memory device is provided with a memory array in which a plurality of memory elements are arranged, a plurality of terminals 12 for receiving a command issued by an outside user, a command interface circuit 11 for interfacing the outside user and the memory cell array, a write-state machine 9 for controlling write-in and erasing operation, and an output circuit 19 for outputting an inside signal to the plurality of terminals 12. The memory element consists of a gate electrode formed on a semiconductor layer through a gate insulation film, a channel region arranged below the gate electrode, a diffusion region arranged at both sides of the channel region and having a conduction type reverse to that of the channel region, and a memory function object having a function holding electric charges formed at both sides of the gate electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
