发明名称 APPARATUS AND METHOD FOR DRY TREATMENT OF HF-CONTAINING GAS
摘要 <p><P>PROBLEM TO BE SOLVED: To detoxify, in a dry state, exhaust gas which contains HF and SOx and is generated when PFC (a perfluoro compound) which is discharged from a factory for manufacturing semiconductors or liquid crystals is decomposed. <P>SOLUTION: In a SOx removing step, SOx is removed from the exhaust gas containing HF and SOx, and the resultant gas is brought into contact with solid Ca(OH)<SB>2</SB>. A Ca(OH)<SB>2</SB>-packed column 101 has: a Ca(OH)<SB>2</SB>layer 110 held on a meshed plate 102; an HF-containing gas introducing port in the lower part; and an HF-free gas discharging port in the upper part. A blower (or an ejector) 104 is arranged at the HF-free gas discharging port for sucking/discharging the gas in the column 101. When SOx remains in the HF-containing gas, the temperature of the layer 110 is preferably adjusted to be 100 to 310°C. As a result, HF can be made harmless without using water. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004344729(A) 申请公布日期 2004.12.09
申请号 JP20030142822 申请日期 2003.05.21
申请人 HITACHI LTD 发明人 SUGANO SHUICHI;TAMADA SHIN;HIGASHIYAMA KAZUHISA
分类号 B01D53/68;B01D53/34;B01D53/50;B01D53/81;(IPC1-7):B01D53/68 主分类号 B01D53/68
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