| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is capable of carrying out a rewriting operation with a low voltage in field effect transistor-type nonvolatile memories. <P>SOLUTION: A field effect transistor 1 equipped with two n-type diffusion layer regions 102 and 103, a gate electrode 109, and electric charge holders 107 and 108, is formed. The one n-type diffusion layer region 102 is kept at a reference voltage, the other n-type diffusion layer region 103 is kept at a certain voltage higher than the reference voltage, the gate electrode 109 is kept at a certain voltage lower than the reference voltage, and a p-type semiconductor substrate 101 is kept at a voltage higher than the reference voltage whereby holes are injected into the electric charge holders. At this point, a forward voltage is applied to the pn junction of the n-type diffusion layer region 102 with the p-type semiconductor substrate 101. Therefore, a voltage required for injecting holes can be set lower than in a case where a forward voltage is not applied. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
