Semiconductor device, and production method for manufacturing such semiconductor device

摘要

A semiconductor device includes a first conductivity type semiconductor substrate. A first conductivity type drift layer is formed on a surface of the first conductivity type semiconductor substrate, and a second conductivity type base region is produced in the first conductivity type drift layer. The second conductivity type base region has a trench formed in a surface thereof. A trench-stuffed layer is formed by stuffing the trench with a suitable material, and a second conductivity type column region formed in the first conductivity type drift layer and sited beneath the trench-stuffed layer. A first conductivity type source region is produced in the second conductivity type base region, and both a gate insulating layer and a gate electrode layer are produced so as to be associated with the first conductivity type source region and the first conductivity type drift layer such that an inversion region is defined in the second conductivity type base region in the vicinity of both the gate insulating layer and the gate electrode layer.