| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A first inventive semiconductor device includes: a die pad 1; a mother chip 2; a daughter chip 3; a conductor film 7 formed on the back surface of the daughter chip 3; bumps 4; a lead 5; and a bonding wire 6, as shown in <cross-reference target="DRAWINGS">FIG. 1B</CROSS-REFERENCE>. The conductor film 7 is connected to an external member via the bonding wire 6 and the lead 5, thus stabilizing a substrate potential. In addition, the conductor film 7 has a high heat conductivity and a low electrical resistance, thereby improving the heat radiation performance of the semiconductor device and suppressing noise radiation.
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| 申请公布号 |
US2004245651(A1) |
申请公布日期 |
2004.12.09 |
| 申请号 |
US20030456846 |
申请日期 |
2003.06.09 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NISHISAKO TAKASHIGE;ISHIYAMA YASUHIRO;KOTANI HISAKAZU |
| 分类号 |
H01L21/60;H01L25/065;(IPC1-7):H01L21/44;H01L23/48;H01L29/40 |
主分类号 |
H01L21/60 |
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