发明名称 ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a light emitting device and an element substrate which are capable of suppressing unevenness in the luminance of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitive element. <P>SOLUTION: A depletion type transistor is used as the driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting signals of a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004347625(A) 申请公布日期 2004.12.09
申请号 JP20030139554 申请日期 2003.05.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OSAME MITSUAKI;ANZAI AYA;YAMAZAKI MASARU
分类号 H01L51/50;G09G3/20;G09G3/30;G09G3/32;G09G5/00;H01L29/786;H05B33/14;H05B37/00;H05B37/02 主分类号 H01L51/50
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