| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize formation of a compound semiconductor base having a small transfer density for a semiconductor device, such as an LED, a hetero junction transistor, etc. <P>SOLUTION: The compound semiconductor base 10 is manufactured by steps of: preparing a silicon substrate 11; obtaining a buffer region 12 containing a dislocation by epitaxially growing a material different from the substrate on the surface of the substrate 11; epitaxially growing a material different from the buffer region on the surface of the buffer region 12 to obtain a dislocation refraction region 13 having many projections 16 for refracting the surface in a dislocation prolonging direction with a surface having worse flatness than the surface of the buffer region; and epitaxially growing a nitride different from the dislocation refraction region on the surface of the dislocation refraction region to obtain a flattened region 14 having better flatness than the surface of the dislocation refraction region and smaller dislocation density than the dislocation refracting region. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
