| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for ion beam etching which can improve the productivity by simplifying the manufacturing process and which is suitable for being used in manufacturing an optical device. SOLUTION: The method of ion beam etching includes a step of oppositely disposing a mask member 20 having an opening 21 formed to define the working region of an ITO (indium tin oxide) film 12 on a substrate 10 to be processed, and illuminating an ion beam IB to the ITO film 12 via the mask member 20 to etch the ITO film 12. Thus, since the formation of a resist mask to the ITO film 12 and its removing step become unnecessary, the number of substrate processing steps for etching can be remarkably reduced to improve the productivity. Since the resist mask is not used, the deterioration of the surface properties of the ITO film 12 can be avoided, and the optical device having excellent optical characteristics can be manufactured. COPYRIGHT: (C)2005,JPO&NCIPI
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