发明名称 Open pattern inductor
摘要 The invention includes a stacked open pattern inductor fabricated above a semiconductor substrate. The stacked open pattern inductor includes a plurality of parallel open conducting patterns embedded in a magnetic oxide or in an insulator and a magnetic material. Embedding the stacked open pattern inductor in a magnetic oxide or in an insulator and a magnetic material increases the inductance of the inductor and allows the magnetic flux to be confined to the area of the inductor. A layer of magnetic material may be located above the inductor and below the inductor to confine electronic noise generated in the stacked open pattern inductor to the area occupied by the inductor. The stacked open pattern inductor may be fabricated using conventional integrated circuit manufacturing processes, and the inductor may be used in connection with computer systems.
申请公布号 US6472720(B2) 申请公布日期 2002.10.29
申请号 US19990261595 申请日期 1999.02.26
申请人 发明人
分类号 H01F17/00;H01F27/36;H01F41/04;H01L21/02;H01L27/08;(IPC1-7):H01L29/00;H01L21/20 主分类号 H01F17/00
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