发明名称 THIN FILM DEPOSITION METHOD AND SYSTEM
摘要 PROBLEM TO BE SOLVED: To deposit a thin film with a prescribed film thickness distribution on a substrate. SOLUTION: In the thin film deposition method where a film material 10 is atomized on a heater 13 arranged at the inside of a vacuum chamber, and is vapor-deposited on a substrate 7 arranged so as to be confronted with the heater 13 to deposit a thin film, prior to the atomization of the film material 10, an electric charge attracting the vapor of the film material 10 to the surface of the substrate 7 is generated by an electron gun 15 or the like. By the preliminary electrification of the surface of the substrate 7, not only the film material 10 directly before the arrival at the substrate 8, but also the film material 10 moved to the vicinity of the substrate is attracted and adsorbed to the surface of the substrate 7, and reevaporation, repelling or the like can be prevented, so that the thin film with a prescribed film thickness distribution can be deposited. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004346339(A) 申请公布日期 2004.12.09
申请号 JP20030141217 申请日期 2003.05.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOSHINAGA MITSUHIRO
分类号 C23C14/22;C23C14/02;C23C14/24;H01G4/015;H01G4/18;H01G4/33;H01G13/00;(IPC1-7):C23C14/22 主分类号 C23C14/22
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