发明名称 MASK UNIT AND FILM DEPOSITION SYSTEM USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a mask unit where heat by a vapor deposition source and plasma discharge is made hard to be conducted to a mask for pattern formation and a substrate on film deposition, so that the reduction in the precision of a pattern and the occurrence of blur caused by the variation of dimensions owing to thermal expansion are prevented, and a fine pattern can be formed on the substrate, and to provide a film deposition system using the same. SOLUTION: The mask unit comprises: a mask 11 for pattern formation arranged so as to be closely stuck to the upper face of a substrate 10 held on a substrate holder 9 and having a prescribed pattern opening part 12; and a shielding mask 22 having a pattern opening part 23 larger than that of the mask 11 for pattern formation by prescribed dimensions. A prescribed gap is provided between the shielding mask 22 and the mask 11 for pattern formation, and the mask 11 for pattern formation and the shielding mask 22 are held on the substrate 10. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004346356(A) 申请公布日期 2004.12.09
申请号 JP20030143032 申请日期 2003.05.21
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOSHINAGA MITSUHIRO
分类号 C23C14/04;(IPC1-7):C23C14/04 主分类号 C23C14/04
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