SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
摘要
<p>A semiconductor device comprising a first hydrogen barrier film, a capacitor element superimposed on the first hydrogen barrier film and a second barrier film formed so as to cover the capacitor element. The first hydrogen barrier film and the second barrier film each contain at least one atom of the same type for close bonding between the first hydrogen barrier film and the second barrier film.</p>
申请公布号
WO2004107446(A1)
申请公布日期
2004.12.09
申请号
WO2004JP03450
申请日期
2004.03.12
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;MIKAWA, TAKUMI;JUDAI, YUJI;KUTSUNAI, TOSHIE