发明名称 High-frequency device
摘要 A high-frequency device comprises a dielectric substrate (11), a filter element which has a plurality of resonating elements (12) made of a first superconductor film on the dielectric substrate (11), a dielectric plate (16) which faces the dielectric substrate (11) substantially in parallel with the substrate (11) and covers the plurality of resonating elements (12), and a spacing adjusting member (17) configured to control the spacing between the dielectric plate (16) and the dielectric substrate (11). The high-frequency device enables the pass-band frequency of the filter to be adjusted with high accuracy without variations in the skirt characteristic or ripple characteristic. <IMAGE>
申请公布号 EP1202375(A3) 申请公布日期 2004.12.08
申请号 EP20010125358 申请日期 2001.10.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TERASHIMA, YOSHIAKI;AIGA, FUMIHIKO;YAMAZAKI, MUTSUKI;FUKE, HIROYUKI;KAYANO, HIROYUKI;KATOH, RIICHI
分类号 H01P1/203 主分类号 H01P1/203
代理机构 代理人
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