Thin film transistor array substrate for LCD

摘要

A three mask process is used for fabricating the device in which a patterned gate insulating layer 146 extends under a data line 104 and an ITO transparent pixel electrode 114, and covers a gate line 102. The transparent pixel electrode and the semiconductor layers of the TFT structure are used as a mask for etching the gate insulator layer pattern. The sidewalls of the gate insulator layer and the semiconductor layers of the TFT/wiring structure are coincident.