发明名称 |
GAS SUPPLY STRUCTURE OF ION IMPLANTATION EQUIPMENT WITH IMPROVED ION GENERATION EFFICIENCY USING EXTENDED GAS INLET |
摘要 |
PURPOSE: A gas supply structure of ion implantation equipment is provided to improve ion generation efficiency by elongating the length of a gas inlet between a source chamber and an arc chamber. CONSTITUTION: A gas supply structure of an ion implantation equipment supplies a gas from a gas container to an arc chamber(50) in a source chamber(40) through a gas inlet(30). At this time the gas inlet has an elongated length of 100-150cm connected to the arc chamber inside the source chamber so as to enlarge thermal contact area. The gas inlet has a spiral shape. Also, the gas inlet is made of a copper tube having high thermal conductivity.
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申请公布号 |
KR20040102711(A) |
申请公布日期 |
2004.12.08 |
申请号 |
KR20030034283 |
申请日期 |
2003.05.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, SANG GUK |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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