发明名称 GAS SUPPLY STRUCTURE OF ION IMPLANTATION EQUIPMENT WITH IMPROVED ION GENERATION EFFICIENCY USING EXTENDED GAS INLET
摘要 PURPOSE: A gas supply structure of ion implantation equipment is provided to improve ion generation efficiency by elongating the length of a gas inlet between a source chamber and an arc chamber. CONSTITUTION: A gas supply structure of an ion implantation equipment supplies a gas from a gas container to an arc chamber(50) in a source chamber(40) through a gas inlet(30). At this time the gas inlet has an elongated length of 100-150cm connected to the arc chamber inside the source chamber so as to enlarge thermal contact area. The gas inlet has a spiral shape. Also, the gas inlet is made of a copper tube having high thermal conductivity.
申请公布号 KR20040102711(A) 申请公布日期 2004.12.08
申请号 KR20030034283 申请日期 2003.05.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, SANG GUK
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
代理机构 代理人
主权项
地址