| 摘要 |
999,407. Zerier diodes. HITACHI SEISAKUSHA KABUSHIKI KAISHA. Nov. 11, 1963 [Nov. 14, 1962], No. 44434/63. Heading H1K. A pair of back-to-back Zener diodes are formed by sandwiching between two bodies of one conductivity type a metal foil consisting of or containing dopont characteristic of the opposite conductivity type and heating to form alloy junctions with both bodies. Typically the bodies are wafers of 0À03 ohm./cm. silicon and the foil of gold-gallium alloy in which case alloying is effected at 700‹ C. Subsequently after its surfaces have been plated with nickel the wafer is subdivided by ultrasonic cutting and individual elements soldered to headers and etched. The resulting elements have a symmetrical characteristic and a temperature coefficient of Zener voltage of less than 0À00075 V/‹C. Use of germanium and A m B v compounds instead of silicon is suggested. |
