发明名称 |
Sidewall polymer deposition method for forming a patterned microelectronic layer |
摘要 |
A plasma etch method for forming a patterned target layer within a microelectrcnic product forms an etch residue layer adjoining a patterned mask layer formed upon a blanket target layer. After removing the patterned mask layer, the etch residue layer is laterally increased to form a laterally increased etch residue layer. The laterally increased etch residue layer is employed as an etch mask for forming the patterned target layer from the blanket target layer. The method is particularly useful for forming gate electrodes within semiconductor products.
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申请公布号 |
US6828237(B1) |
申请公布日期 |
2004.12.07 |
申请号 |
US20030662069 |
申请日期 |
2003.09.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHAN BOR-WEN;CHEN FANG-CHENG;CHIU HSIEN-KUANG;CHIU YUAN-HUNG;TAO HAN-JAN |
分类号 |
H01L21/033;H01L21/28;H01L21/3213;H01L21/8234;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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