| 摘要 |
A semiconductor device and a fabricating method thereof, capable of suppressing diffusion of hydrogen into a device and also capable of maintaining high performance are provided, while a passivation film is formed in a device whose performance is easily deteriorated by hydrogen diffusions. The semiconductor device is comprised of: a semiconductor substrate; a ferroelectric capacitor formed on the semiconductor substrate; a first interlayer film containing the ferroelectric capacitor; and a passivation film formed on the first interlayer film; in which a hydrogen diffusion preventing film is formed under the passivation film, and substantially adjacent to this passivation film. Also, the method for fabricating the semiconductor device is comprised of at least a step for forming a hydrogen diffusion preventing film under a passivation film and also substantially adjacent to this passivation film.
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