| 发明名称 |
Method for modifying switching field characteristics of magnetic tunnel junctions |
| 摘要 |
A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.
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| 申请公布号 |
US6828610(B2) |
申请公布日期 |
2004.12.07 |
| 申请号 |
US20030626447 |
申请日期 |
2003.07.23 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
ANTHONY THOMAS;TRAN LUNG;SHARMA MANISH |
| 分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):H01L31/062;H01L31/113 |
主分类号 |
G11C11/15 |
| 代理机构 |
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代理人 |
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| 主权项 |
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