| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gale electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
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| 申请公布号 |
US6828586(B2) |
申请公布日期 |
2004.12.07 |
| 申请号 |
US20040793031 |
申请日期 |
2004.03.05 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
FUJIMOTO ETSUKO;MURAKAMI SATOSHI;YAMAZAKI SHUNPEI;EGUCHI SHINGO |
| 分类号 |
H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L29/04;H01L31/20;H01L31/036;H01L31/037 |
主分类号 |
H01L21/77 |
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